Conventional gallium nitride (GaN) LED components are usually based on sapphire or silicon carbide (SiC) because the two materials have a good lattice matching with GaN, and the substrate is usually 2" or 4" in size. The industry has been working to develop GaN with more abundant silicon wafers (6" or larger) because silicon substrates can significantly reduce costs and can be fabricated on automated IC production lines. It is reasonable to estimate Traditionally, this substrate can save 80% of the cost.
However, the problem with the silicon substrate is that there is a serious mechanical and thermal mismatch with GaN, which causes severe warpage of the wafer constituting the LED element and deterioration of the quality of the crystal material. Silicon-based GaN technology from Cambridge University's derivative company CamGan (acquired by Plessey in 2012) has now solved this mismatch and has been successfully applied to its wafer processing plant in Plymouth, UK. As a result, the industry's first low-cost, entry-level commercial silicon-based GaN LED is now on the market. The primary products are mainly for the indicator light and key lighting market. The luminous efficiency is 30-40lm/W, and 70lm/W products will be launched in the third and fourth quarters of this year, which will be supplied to more general lighting markets.
　
Figure 1: Vertical LED production flow chart.
GaNonSiGthth: Silicon-based GaN growth
Mirrorlayeradded: added mirror layer
Wafer: Using Wafers
Flipbondedwafer: flip-chip bonded wafer
Substrateremoval: substrate removal
Metallisationandsurfacetexturing: spraying metal layers and surface textures
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